References
1. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood and C. A. Burrus: ‘Band-edge electroabsorption in quantum well structures: the quantumconfined stark effect’, Phys. Rev. Lett. , 1984, 53, (22), 2173–2176
2. J. -H. Ryou, W. Lee, J. Limb, D. Yoo, J. P. Liu, R. D. Dupuis, Z. H. Wu, A. M. Fischer and F. A. Ponce: ‘Control of quantum-confined Stark effect in InGaN/GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes’, Appl. Phys. Lett. , 2008, 92, (10), 101113.
3. C. Wood and D. Jena: ‘Polarization effects in semiconductors: from ab initio theory to device applications’, 2007, New York, Springer.
4. M. Stevens, A. Bell, M. R. McCartney, F. A. Ponce, H. Marui and S. Tanaka: ‘Effect of layer thickness on the electrostatic potential in InGaN quantum wells’, Appl. Phys. L ett. 2004, 85, (20), 4651–4653.
5. M. R. McCartney, F. A. Ponce, J. Cai and D. P. Bour: ‘Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography’, Appl. Phys. Lett. , 2000, 76, (21), 3055.
6. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano and I. Akasaki: ‘Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells’, Jpn J. A ppl. Phys. , 1997, 36, L382–L385.
7. J. H. Ryou, P. D. Yoder, J. Liu, Z. Lochner, H. S. Kim, S. Choi, H. J. Kim and R. D. Dupuis: ‘Control of quantum-confined stark effect in InGaN-based quantum wells’, IEEE J. Sel. Top. Quantum Electron. , 2009, 15, (4), 1080–1091.
8. H. S. Kim, J. Y. Lin, H. X. Jiang, W. W. Chow, A. Botchkarev and H. Morkoc¸: ‘Piezoelectric effects on the optical properties of GaN/Al xGa12xN multiple quantum wells’, Appl. Phys. Lett. ,1998, 73, (1998), 3426–3428.
9. S. Nakamura and M. R. Krames: ‘History of gallium–nitridebased light-emitting diod es for illumination ’, Proc. IEEE, 2013, 101, (10), 2211–2220.
10. T. Takeuchi, H. Amano and I. Akasaki: ‘Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells’, Jpn J. Appl. Phys. , 2000, 39, (Part 1), 413–416.
11. “ III-Nitride Ultraviolet Emitters” Technology and Applications by Michael Kneissl and Jens Rass, 2016,Springer International Publishing Switzerland, DOI 10.1007/978-3-31924100-5
12. ‘The Nobel Prize in Physics’, Nobel Media, 2014, http://www.nobelprize.org/nobel_prizes/physics/laureates/2014/ (accessed 20
February 2015).
13. C.X.Ren(2016) “Polarisation field in III- Nitrides:Effects and control”,,material science and technology, 32:5,418-433,DOI: 10.1179/1743284715Y.0000000103
14. Rattanakul, S.; Oguma, K. Inactivation kinetics and efficiencies of UV-LEDs against Pseudomonas aeruginosa, Legionella pneumophila, and surrogate microorganisms. Water Res. 2018, 130, 31–37. [CrossRef] [PubMed].
15. J. Seo Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz and A. Hangleiter: ‘Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa12xN quantum wells’, Phys. Rev. B, 1998, 57B, (16), R9435–R9438..
16. Christopher Ren, polarisation field in III-nitride: effect and control, Material Science and Technoligy, july 2015