Abstract View

Author(s): Shekhar Patra, Sanjay Tiwari, Umang Singh

Email(s): Shekhar.patra@gmail.com

Address: Photonics Research laboratory, SOS in Electronics and Photonics, Pt. Ravishankar Shukla University Raipur Chhattisgarh, India
Research Scholar, Department of EE, III Bombay, Maharashtra, India
*Corresponding Author: Shekhar.patra@gmail.com

Published In:   Volume - 35,      Issue - 1,     Year - 2022

DOI: 10.52228/JRUB.2022-35-1-10  

ABSTRACT:
III- Nitride materials have radically changed the lighting industry allowing for the developments of high efficiency and brightness ultraviolet LED. In this paper, the characterised between electroluminescence spectra pick wavelength and QW thickness through simulations with presence on electric field. According the QCSE when electric field applied perpendicular to the QWs layers resulted in large read shifts in absorption. I have taken One Dimensional Drift Diffusion charge control solver (1D-DDCC) software for simulations that is solve Passion Schrodinger equation developed by Pro.Yuh-Renn WU of UM. This solver has many functions like- Tunnable parameters for all basic material, Hetrojunction simulation, Dopant activation energy, Eigen solve for Schrodinger equation.

Cite this article:
Patra, Tiwari and Singh (2022). Parametric study of AlGAN/GaN UV-Led Based on Quantum Confined Stark Effect (QCSE). Journal of Ravishankar University (Part-B: Science), 35(1), pp. 106-112.DOI: https://doi.org/10.52228/JRUB.2022-35-1-10


References

1.     D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood and C. A. Burrus: ‘Band-edge electroabsorption in quantum well structures: the quantumconfined stark effect’, Phys. Rev. Lett. , 1984, 53, (22), 2173–2176

2.     J. -H. Ryou, W. Lee, J. Limb, D. Yoo, J. P. Liu, R. D. Dupuis, Z. H. Wu, A. M. Fischer and F. A. Ponce: ‘Control of quantum-confined Stark effect in InGaN/GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes’, Appl. Phys. Lett. , 2008, 92, (10), 101113.

3.     C. Wood and D. Jena: ‘Polarization effects in semiconductors: from ab initio theory to device applications’, 2007, New York, Springer.

4.      M. Stevens, A. Bell, M. R. McCartney, F. A. Ponce, H. Marui and S. Tanaka: ‘Effect of layer thickness on the electrostatic potential in InGaN quantum wells’, Appl. Phys. L ett. 2004, 85, (20), 4651–4653.

5.     M. R. McCartney, F. A. Ponce, J. Cai and D. P. Bour: ‘Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography’, Appl. Phys. Lett. , 2000, 76, (21), 3055.

6.      T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano and I. Akasaki: ‘Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells’, Jpn J. A ppl. Phys. , 1997, 36, L382–L385.

7.     J. H. Ryou, P. D. Yoder, J. Liu, Z. Lochner, H. S. Kim, S. Choi, H. J. Kim and R. D. Dupuis: ‘Control of quantum-confined stark effect in InGaN-based quantum wells’, IEEE J. Sel. Top. Quantum Electron. , 2009, 15, (4), 1080–1091.

8.      H. S. Kim, J. Y. Lin, H. X. Jiang, W. W. Chow, A. Botchkarev and H. Morkoc¸: ‘Piezoelectric effects on the optical properties of GaN/Al xGa12xN multiple quantum wells’, Appl. Phys. Lett. ,1998, 73, (1998), 3426–3428.

9.     S. Nakamura and M. R. Krames: ‘History of gallium–nitridebased light-emitting diod es for illumination ’, Proc. IEEE, 2013, 101, (10), 2211–2220.

10.   T. Takeuchi, H. Amano and I. Akasaki: ‘Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells’, Jpn J. Appl. Phys. , 2000, 39, (Part 1), 413–416.

11.  “ III-Nitride Ultraviolet Emitters” Technology and Applications by Michael Kneissl and Jens Rass, 2016,Springer International Publishing Switzerland, DOI 10.1007/978-3-31924100-5

12.  ‘The Nobel Prize in Physics’, Nobel Media, 2014, http://www.nobelprize.org/nobel_prizes/physics/laureates/2014/ (accessed 20
February 2015).

13.  C.X.Ren(2016) “Polarisation field in III- Nitrides:Effects and control”,,material science and technology, 32:5,418-433,DOI: 10.1179/1743284715Y.0000000103

14.  Rattanakul, S.; Oguma, K. Inactivation kinetics and efficiencies of UV-LEDs against Pseudomonas aeruginosa, Legionella pneumophila, and surrogate microorganisms. Water Res. 2018, 130, 31–37. [CrossRef] [PubMed].

15.  J. Seo Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz and A. Hangleiter: ‘Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa12xN quantum wells’, Phys. Rev. B, 1998, 57B, (16), R9435–R9438..

16.  Christopher Ren, polarisation field in III-nitride: effect and control, Material Science and Technoligy, july 2015

Related Images:



Recent Images



OLED: New Generation Display Technology
Parametric study of AlGAN/GaN UV-Led Based on Quantum Confined Stark Effect (QCSE)
Analysis of High Efficient Perovskite Solar Cells Using Machine Learning
Inverted Bulk Heterojunction (BHJ) Polymer (PCDTBT-PC70BM) Solar Photovoltaic Technology
Design and Device Modeling of Lead Free CsSnI3 Perovskite Solar Cell
Study of Design and Device Modeling of Double layered Perovskite Solar Cells
Screening Some Extracellular Enzymes of Wild Mushrooms from Pt. Ravishankar Shukla University Campus
Quantum Dots and Nanohybrids and their Various Applications: A Review
Species of Termitomyces (Agaricales) Occurring in Achanakmar Biosphere Reserve, Chhattisgarh
Introduction to Cloud Storage Services

Tags


Recomonded Articles:

Author(s): D.K. Sen; S. Bhushan

DOI:         Access: Open Access Read More

Author(s): JK Nandagawe; PK Patil; RD Lawangar-Pawer

DOI:         Access: Open Access Read More

Author(s): Sachchidanand Shukla; Ramesh Chandra Tiwari; Laxmi Kant Singh

DOI:         Access: Open Access Read More

Author(s): Jitendra Kumar Sharma;Sanjay Tiwari;Vivek Kant Jogi;Rajesh Kumar Awasthy

DOI:         Access: Open Access Read More

Author(s): Runa Das; S. Bhushan

DOI:         Access: Open Access Read More

Author(s): Shekhar Patra; Sanjay Tiwari; Umang Singh

DOI: 10.52228/JRUB.2022-35-1-10         Access: Open Access Read More