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Author(s): P. Bose, S. Bhushan

Email(s): Email ID Not Available

Address: School of Studies in Physics, Pt. Ravishankar Shukla University, Raipur - 492010. Chhattisgarh, India

Published In:   Volume - 14,      Issue - 1,     Year - 2001

DOI: Not Available

ABSTRACT:
Results of photoconductivity rise and decay, excitation and absorption spectra, XRD and SEM studies are presented for unannealed and annealed conditions. Due to annealing dark current is found to be zero and thus the ratio of photocurrent to dark current goes to infinitely high value. Values of trap depth E .• lifetime t, and mobility u are also evaluated from photoconductivity decay .. Band gaps are determined from the two spectra. Diffraction lines in XRD studies are associated to CdS and PbS. SEM studies show growth of layered structure.

Cite this article:
Bose and Bhushan (2001). Effect of annealing on some (Cd-Pb)S photoconducting films. Journal of Ravishankar University (Part-B: Science), 14(1), pp.41-52.


References not available.

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