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Author(s): SachchidaNand Shukla, Syed Shamroz Arshad, Geetika Srivastava, Kavita Thakur

Email(s): sachida.shukla@gmail.com

Address: Pt. Ravishankar Shukla University Raipur, Chhattisgarh and Department of Physics and Electronics (on lien), Dr Ram Manohar Lohia Avadh University, Ayodhya, Uttar Pradesh
Department of Physics and Electronics, Dr Ram Manohar Lohia Avadh University, Ayodhya, Uttar Pradesh
Department of Physics and Electronics, Dr Ram Manohar Lohia Avadh University, Ayodhya, Uttar Pradesh
School of Studies in Electronics and Photonics, Pt. Ravishankar Shukla University Raipur, Chhattisgarh

*Corresponding author: sachida.shukla@gmail.com

Published In:   Volume - 39,      Issue - 1,     Year - 2026

DOI: 10.52228/JRUB.2026-39-1-17  

ABSTRACT:
The Darlington and Sziklai transistor pairs have emerged as promising alternatives to conventional single-transistor configurations due to their advantageous combination of wide bandwidth and high gain at lower drive voltages. This review presents a detailed examination of various design approaches for developing Low Noise Amplifiers (LNAs) operating in the GHz frequency range, with particular emphasis on these transistor pair topologies. A total of 45 research sources published between 2015 and 2026 were initially surveyed, out of which 36 were found relevant to the objective of review. The analysis shows that Darlington pair–based CMOS operational amplifiers deliver the highest gain, while Sziklai pair–based NMOS and PMOS LNAs offer the broadest bandwidth compared to conventional LNA architectures. These findings strongly support the core hypothesis regarding their suitability for ultra-wideband GHz applications. The review concludes by highlighting the key challenges associated with implementing these LNAs at GHz frequencies.

Cite this article:
Shukla, Arshad, Srivastava and Thakur (2026). Low Noise Amplifier Design at GHz-Frequencies: A Review of Recent Advances and Challenges. Journal of Ravishankar University (Part-B: Science), 39(1), pp. 267-286. DOI:https://doi.org/10.52228/JRUB.2026-39-1-17


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