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Author(s): Jitendra Kumar Sharma, Sanjay Tiwari, Vivek Kant Jogi, Rajesh Kumar Awasthy

Email(s): drsanjaytiwari@gmail.com

Address: School of Studies in Electronics, Pt. RaviShukla University, Raipur 492010, Chhattisgarh, India

Published In:   Volume - 28,      Issue - 1,     Year - 2015


Cite this article:
Sharma, Tiwari, Jogi and Awasthy (2015). Thickness Dependence of a Single Layer Polymer-Based Light-Emitting Diode. Journal of Ravishankar University (Part-B: Science), 28(1), pp. 60-64.



Journal of Ravishankar University-B, 28, 60-64 (2015)

Thickness Dependence of a Single Layer Polymer-Based Light-Emitting Diode

Jitendra Kumar Sharma, Sanjay Tiwari*, Vivek Kant Jogi and Rajesh Kumar Awasthy

School of Studies in Electronics, Pt. RaviShukla University, Raipur 492010, Chhattisgarh, India

*Corresponding author: drsanjaytiwari@gmail.com

[Received: 23 November 2014: revised version received 11 April 2015: accepted 16 April 20151

Abstract. The results of the spatial variation of the exciton formation rate are supported by reports of electroluminescence efficiency increase upon insertion of spacer layers between the active polymer layer and the metallic cathode. Further evidence for a difference in operating mechanism between Polyfluorenes (PFO) devices and conventional semiconductor diodes is demonstrated by changing the thickness of the polymer layer. Reducing the thickness lowers the device operating voltage. We have demonstrated that the J.V characteristics depend, not on the voltage (as for conventional devices), but instead on the electric field strength

Keywords: Polymer light-emitting diodes, Polyfluorene (PFO), Thickness, Current-Density.

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